Microwave Sintering of Boron Carbide

Sintering of cubic boron nitride under high pressures and temperatures in the presence of boron carbide as the binding material

Sintering of cubic boron nitride (cBN) was carried out by subjecting fine powders of cBN to high pressures and temperatures (P = 50-60 kb, T = 1200-1500°C ) in the presence of boron carbide as the main binding material together with a small amount of aluminium nitride. The composites were characterized by X-ray diffraction, scanning electron microscopy, FTIR, Raman Spectroscopy and microhardnes...

Boron carbide/n-silicon carbide heterojunction diodes

Sintering boron carbide ceramics without grain growth by plastic deformation as the dominant densification mechanism

A new ceramic sintering approach employing plastic deformation as the dominant mechanism is proposed, at low temperature close to the onset point of grain growth and under high pressure. Based on this route, fully dense boron carbide without grain growth can be prepared at 1,675-1,700 °C and under pressure of (≥) 80 MPa in 5 minutes. The dense boron carbide shows excellent mechanical properties...

Microwave Sintering of Mullite

Microwave sintering possesses unique attributes and has the potential to be development as a new technique for controlling microstructure and to improve the properties of advanced ceramics. Because microwave radiation penetrates most ceramics, uniform volumetric heating is possible. Thermal gradients, which are produced during conventional sintering because of conductive and radioactive heat tr...

Shock-wave strength properties of boron carbide and silicon carbide